DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

Vervaardiger Deel nommer

DMJ70H900HJ3

Interne Deel nommer

AX-DMJ70H900HJ3

vervaardiger

Diodes Incorporated

Kort beskrywing

MOSFET BVDSS 651V 800V TO251

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

323020 Pieces

verwysingsprys

~~USD 0.86856~~

Ons prys

- (Kontak ons gerus vir 'n beter prys: [email protected])

AX Semiconductor het DMJ70H900HJ3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir DMJ70H900HJ3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : DMJ70H900HJ3

vervaardiger : Diodes Incorporated

beskrywing : MOSFET BVDSS 651V 800V TO251

reeks : Automotive, AEC-Q101

Deelstatus : Active

VOO-tipe : N-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 700V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 7A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 18.4nC @ 10V

Vgs (maksimum) : ±30V

Invoerkapasiteit (Ciss) (Max) @ Vds : 603pF @ 50V

VOO-funksie : -

Kragdissipasie (maksimum) : 68W (Tc)

Werkstemperatuur : -55°C ~ 150°C (TJ)

Monteringstipe : Through Hole

Verskaffer toestelpakket : TO-251

Pakket / saak : TO-251-3, IPak, Short Leads

gewig : -

toestand : Nuut en oorspronklik

dokumente vir DMJ70H900HJ3

Inligtingsblaaie : DMJ70H900HJ3.pdf

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