SQ2361EES-T1-GE3 - MOSFET P-CH 60V 2.5A SOT23

Vervaardiger Deel nommer

SQ2361EES-T1-GE3

Interne Deel nommer

AX-SQ2361EES-T1-GE3

vervaardiger

Vishay Siliconix

Kort beskrywing

MOSFET P-CH 60V 2.5A SOT23

RoHS Status

Loodvrye / RoHS Compliant

Afleweringstyd

1-2 dae

beskikbare hoeveelheid

13216 Pieces

verwysingsprys

~~USD 0~~

Ons prys

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AX Semiconductor het SQ2361EES-T1-GE3 in voorraad vir verkoop.

Gestuur opsies en gestuur tyd:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betaal opsies:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

spesifikasies vir SQ2361EES-T1-GE3

gehalte waarborg : 365 dae waarborg

Stock Resource : Franchise verspreider / Vervaardiger Direkte

Land van oorsprong : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Onderdeel nommer : SQ2361EES-T1-GE3

vervaardiger : Vishay Siliconix

beskrywing : MOSFET P-CH 60V 2.5A SOT23

reeks : TrenchFET®

Deelstatus : Obsolete

VOO-tipe : P-Channel

tegnologie : MOSFET (Metal Oxide)

Dreineer na die bronspanning (Vdss) : 60V

Stroom - Deurlopende dreinering (id) @ 25 ° C : 2.5A (Tc)

Aandrywing Spanning (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 150 mOhm @ 2.4A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Heklading (Vg) (Maks) @ Vgs : 17nC @ 10V

Vgs (maksimum) : ±20V

Invoerkapasiteit (Ciss) (Max) @ Vds : 545pF @ 30V

VOO-funksie : -

Kragdissipasie (maksimum) : 2W (Tc)

Werkstemperatuur : -55°C ~ 175°C (TJ)

Monteringstipe : Surface Mount

Verskaffer toestelpakket : SOT-23-3 (TO-236)

Pakket / saak : TO-236-3, SC-59, SOT-23-3

gewig : -

toestand : Nuut en oorspronklik

dokumente vir SQ2361EES-T1-GE3

Inligtingsblaaie : SQ2361EES-T1-GE3.pdf

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